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| NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector-Emitter Sustaining Voltage D High DC Current Gain D Low Collector-Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 50mA, IB = 0, Note 1 ICEX VCE = 150V, VEB(off) = 1.5V VCE = 150V, VEB(off) = 1.5V, TC = +150C ICEO ICBO Emitter Cutoff Current IEBO VCE = 75V, IB = 0 VCB = 180V, IE = 0 VBE = 6V, IC = 0 150 - - - - - - - - - - - - 10 1.0 50 50 100 V mA mA A A A Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain hFE VCE = 2V, IC = 0.5A VCE = 2V, IC = 10A VCE = 2V, IC = 25A Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) fT Cob tr ts tf IC = 10A, IB = 1.0A IC = 25A, IB = 2.5A Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Switching Characteristics Rise Time Storage Time Fall Time VCC = 80V, IC = 10A, IB1 = 1A, VBE(off) = 6V VCC = 80V, IC = 10A, IB1 = IB2 =1A - - - - - - 0.3 1.0 0.25 s s VCE = 10V, IC = 1A, f = 10MHz, Note 2 VCB = 10V, IE = 0, f = 0.1MHz 40 - - - - 300 MHz pF IC = 10A, IB = 1.0A IC = 25A, IB = 2.5A IC = 10A, VCE = 2V 50 30 12 - - - - - - - - - - - - - - 120 - 1.0 1.8 1.8 2.5 1.8 V V V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. fT = |hfe| * ftest. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter .215 (5.45) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE327
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